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Wolfgang Windl

  • Professor, Physics
  • Professor, Materials Science Engineering
  • 491 Watts Hall
    2041 College Rd
    Columbus, OH 43210
  • 614-247-6900

Honors

  • May, 2012

    College of Engineering Lumley Research Award.

  • January, 2006

    Fraunhofer-Bessel Research Award.

  • January, 2006

    Mars Fontana Teaching Award.

  • January, 2004

    Nano Technology Industrial Impact Award.

Chapters

2007

  • 2007. In International Semiconductor Device Research Symposium,
  • 2007. In ESSDERC 2007. Proceedings of the 37th European Solid-State Device Research Conference,
  • 2007. In Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II,

2006

  • 2006. In Materials in Extreme Environments. Symposium (Materials Research Society Symposium Proceedings Vol.929),

2004

  • 2004. In Silicon Front-End Junction Formation-Physics and Technology (Materials Research Society Symposium Proceedings Vol.810),

2003

  • 2003. In 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (Cat. No.03TH8679),

2002

  • 2002. In 2002 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2002 (IEEE Cat. No.02TH8621),

2001

  • 2001. In Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III. Symposium (Materials Research Society Proceedings Vol.669),
  • 2001. In Advances in Materials Theory and Modeling - Bridging Over Multiple-Length and Time Scales. Symposium (Materials Research Society Symposium Proceedings Vol.677),

1999

  • 1999. In Si Font-End Processing - Physics and Technology of Dopant-Defect Interactions. Symposium,
  • 1999. In III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium,
  • 1999. In 1999 International Conference on Modeling and Simulation of Microsystems,
  • 1999. In Thermoelectric Materials 1998 - Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications. Symposium,

1998

  • 1998. In Semiconductor Process and Device Performance Modelling. Symposium,
  • 1998. In Defect and Impurity Engineered Semiconductors II. Symposium,

1996

  • 1996. In 23rd International Conference on the Physics of Semiconductors,

Journal Articles

2019

  • Jamison, J.S.; May, B.J.; Deitz, J.I.; Chien, S.C. et al., 2019, "Ferromagnetic Epitaxial μ-Fe2O3 on β-Ga2O3: A New Monoclinic Form of Fe2O3." Crystal Growth and Design 19, no. 8, 4205-4211 - 4205-4211.

2018

  • Oberdorfer, C.; Withrow, T.; Yu, L.J.; Fisher, K. et al., 2018, "Influence of surface relaxation on solute atoms positioning within atom probe tomography reconstructions." Materials Characterization 146, 324-335 - 324-335.

2015

  • Agrawal, A.; Mishra, R.; Ward, L.; Flores, K.M. et al., 2015, "Corrigendum: An embedded atom method potential of beryllium (Modelling Simul. Mater. Sci. Eng. 21 085001)." Modelling and Simulation in Materials Science and Engineering 23, no. 6,
  • Garcia, T.R.; Reinke, B.; Windl, W.; Blue, T.E., 2015, "Alpha spectroscopy for in-situ liquid radioisotope measurements." Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 780, 119-126 - 119-126.

2014

  • Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W., 2014, "Advanced Extra Functionality CMOS-based Devices." Physica Status Solidi (C) Current Topics in Solid State Physics 11, no. 1, 7-8 - 7-8.
  • Jiang,Shishi; Butler,Sheneve; Bianco,Elisabeth; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2014, "Improving the stability and optical properties of germanane via one-step covalent methyl-termination.." Nature communications 5, 3389-? - 3389-?.
  • Restrepo,Oscar,D; Mishra,Rohan; Goldberger,Joshua,E; Windl,Wolfgang, 2014, "Tunable gaps and enhanced mobilities in strain-engineered silicane." JOURNAL OF APPLIED PHYSICS 115, no. 3, 033711 - 033711.
  • Jiang,Shishi; Butler,Sheneve; Bianco,Elisabeth; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2014, "Improving the stability and optical properties of germanane via one-step covalent methyl-termination." NATURE COMMUNICATIONS 5, 3389 - 3389.

2013

  • Butler,Sheneve,Z; Hollen,Shawna,M; Cao,Linyou; Cui,Yi; Gupta,Jay,A; Gutierrez,Humberto,R; Heinz,Tony,F; Hong,Seung,Sae; Huang,Jiaxing; Ismach,Ariel,F; Johnston-Halperin,Ezekiel; Kuno,Masaru; Plashnitsa,Vladimir,V; Robinson,Richard,D; Ruoff,Rodney,S; Salahuddin,Sayeef; Shan,Jie; Shi,Li; Spencer,Michael,G; Terrones,Mauricio; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene." ACS NANO 7, no. 4, 2898-2926 - 2898-2926.
  • Butler,Sheneve,Z; Hollen,Shawna,M; Cao,Linyou; Cui,Yi; Gupta,Jay,A; Gutiérrez,Humberto,R; Heinz,Tony,F; Hong,Seung,Sae; Huang,Jiaxing; Ismach,Ariel,F; Johnston-Halperin,Ezekiel; Kuno,Masaru; Plashnitsa,Vladimir,V; Robinson,Richard,D; Ruoff,Rodney,S; Salahuddin,Sayeef; Shan,Jie; Shi,Li; Spencer,Michael,G; Terrones,Mauricio; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Progress, challenges, and opportunities in two-dimensional materials beyond graphene.." ACS nano 7, no. 4, 2898-2926 - 2898-2926.
  • Bianco,Elisabeth; Butler,Sheneve; Jiang,Shishi; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Stability and exfoliation of germanane: a germanium graphane analogue.." ACS nano 7, no. 5, 4414-4421 - 4414-4421.
  • Ko,Dongkyun; Zhao,X,W; Reddy,Kongara,M; Restrepo,O,D; Mishra,R; Lemberger,T,R; Beloborodov,I,S; Trivedi,Nandini; Padture,Nitin,P; Windl,W; Yang,F,Y; Johnston-Halperin,E, 2013, "Defect states and disorder in charge transport in semiconductor nanowires." JOURNAL OF APPLIED PHYSICS 114, no. 4, 043711 - 043711.
  • Morrow,Ryan; Mishra,Rohan; Restrepo,Oscar,D; Ball,Molly,R; Windl,Wolfgang; Wurmehl,Sabine; Stockert,Ulrike; Büchner,Bernd; Woodward,Patrick,M, 2013, "Independent ordering of two interpenetrating magnetic sublattices in the double perovskite Sr2CoOsO6.." Journal of the American Chemical Society 135, no. 50, 18824-18830 - 18824-18830.
  • Gohlke,David; Mishra,Rohan; Restrepo,Oscar,D; Lee,Donghun; Windl,Wolfgang; Gupta,Jay, 2013, "Atomic-Scale Engineering of the Electrostatic Landscape of Semiconductor Surfaces." NANO LETTERS 13, no. 6, 2418-2422 - 2418-2422.
  • Bianco,Elisabeth; Butler,Sheneve; Jiang,Shishi; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Stability and Exfoliation of Germanane: A Germanium Graphane Analogue." ACS NANO 7, no. 5, 4414-4421 - 4414-4421.

2012

  • Phillips, P.J.; De Graef, M.; Kovarik, L.; Agrawal, A. et al., 2012, "Low angle ADF STEM defect imaging." Microscopy and Microanalysis 18, 676-677 - 676-677.
  • Williams, R.E.A.; Dixit, M.; Hauser, A.; Mishra, R. et al., 2012, "Comparative Study for Simulation of EELS Core Loss for Transition Metals in Double Perovskite Systems." Microscopy and Microanalysis 18, no. S2, 308-309 - 308-309.

2011

  • Nagpure,Shrikant,C; Babu,S,S; Bhushan,Bharat; Kumar,Ashutosh; Mishra,Rohan; Windl,Wolfgang; Kovarik,L; Mills,Michael, 2011, "Local electronic structure of LiFePO4 nanoparticles in aged Li-ion batteries." ACTA MATERIALIA 59, no. 18, 6917-6926 - 6917-6926.

2009

  • Li,Dongsheng; Windl,Wolfgong; Padture,Nitin,P, 2009, "Toward Site-Specific Stamping of Graphene." ADVANCED MATERIALS 21, no. 12, 1243-? - 1243-?.

2007

  • Kim,Hong,Jin; Windl,Wolfgang; Rigney,David, 2007, "Structure and chemical analysis of aluminum wear debris: Experiments and ab initio simulations." ACTA MATERIALIA 55, no. 19, 6489-6498 - 6489-6498.

2005

  • Liu, X.Y.; Windl, W., 2005, "Theoretical study of boron clustering in silicon." Journal of Computational Electronics 4, no. 3-4, 203-219 - 203-219.

2001

  • Windl, W.; Daw, M.S.; Carlson, N.N.; Laudon, M., 2001, "Multiscale modeling of stress-mediated diffusion in silicon - volume tensors." Materials Research Society Symposium - Proceedings 677, AA9.4.1-AA9.4.6 - AA9.4.1-AA9.4.6.
  • Windl, W.; Laudon, M.; Carlson, N.N.; Daw, M.S., 2001, "CSE in industry." Computing in Science and Engineering 3, no. 4, 92 - 92.
  • Daw, M.S.; Windl, W.; Carlson, N.N.; Laudon, M. et al., 2001, "Effect of stress on dopant and defect diffusion in Si: A general treatment." Physical Review B - Condensed Matter and Materials Physics 64, no. 4, 452051-4520510 - 452051-4520510.
  • Liu, C.L.; Windl, W.; Borucki, L.; Lu, S. et al., 2001, "Ab-initio modeling of C-B interactions in Si." Materials Research Society Symposium - Proceedings 669, J461-J466 - J461-J466.

1999

  • Dong, J.; Sankey, O.F.; Demkov, A.A.; Ramachandran, G.K. et al., 1999, "Theoretical calculation of the vibrational modes in Ge46 clathrate and related MxGayGe46-y type clathrates." Materials Research Society Symposium - Proceedings 545, 443-448 - 443-448.

1998

  • Collins, L.; Kress, J.; Kwon, I.; Windl, W. et al., 1998, "Quantum molecular dynamics simulations of dense matter." Journal of Computer-Aided Materials Design 5, no. 2-3, 173-191 - 173-191.

Unknown

  • Wang, Y.; Windl, W., "Native Point Defects in Boron Arsenide."

Papers in Proceedings

2017

  • Roth, P.C.; Shan, H.; Riegner, D.; Antolin, N. et al. "Performance analysis and optimization of the RAMPAGE metal alloy potential generation software." (10 2017).

2014

  • Liu, P.; Guo, J.; Liu, L.; Windl, W. et al. "Direct observation of defects in hexagonal boron nitride monolayers." (1 2014).

2013

  • Garcia, T.R.; Reinke, B.; Kumar, A.; Windl, W. et al. "Simulation and analytical form of the molten salt alpha-particle spectrum." (1 2013).
  • Reinke, B.; Garcia, T.; Wood, T.; Petrie, C. et al. "Temperature controlled cryostat for electrical and optical reactor irradiation experiments." (1 2013).

2012

  • Garcia, T.R.; Reinke, B.; Kumar, A.; Blue, T.E. et al. "Electrical characterization of high temperature SiC alpha-particle detectors for pyroprocessing." (12 2012).
  • Petrie, C.; Hawn, D.; Blue, T.E.; Windl, W. "In-situ performance of silica optical fibers heated to 1000°C." (12 2012).
  • Hawn, D.; Petrie, C.; Blue, T.E.; Windl, W. "In-situ performance of optical fibers heated to 600°C during gamma irradiation." (12 2012).
  • Garcia, T.R.; Reinke, B.; Kumar, A.; Zelaski, A. et al. "High temperature SiC alpha-particle detectors for pyroprocessing." (12 2012).

2011

  • Zelaski, A.; Garcia, T.R.; Kumar, A.; Blue, T.E. et al. "Development of 4H-SiC schottky diode detector for nuclear fuel reprocessing applications." (12 2011).
  • Garcia, T.R.; Blue, T.E.; Windl, W. "Computational alpha-particle spectroscopy using TCAD for pyroprocessing monitoring." (12 2011).
  • Kumar, A.; Restrepo, O.D.; Windl, W. "Ab-initio calculation of defect energetics and electronic structure in 4H-SiC." (12 2011).
  • Govindarajan, H.; Mishra, R.; Windl, W. "Atomic-scale modeling of the effects of irradiation on the optical properties of silica glass fibers." (12 2011).

2008

  • Windl, Wolfgang "Charge of Self-Interstitials and Boron-Interstitial Pairs as a Function of Doping Concentration." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008).
  • Gupta, N.; Windl, W. "Ab-initio modeling of arsenic pile-up and deactivation at the Si/SiO 2 interface." (12 2008).
  • Windl, W. "Ab-initio modeling of point defects, impurities and diffusion in silicon." (12 2008).
  • Luo, W.; Ravichandran, K.; Windl, W.; Fonseca, L.R.C. "Ab initio modeling of contact structure formation of Carbon nanotubes and its effect on electron transport." (12 2008).

2006

  • Windl, W. "Ab-initio calculations of the energetics and kinetics of defects and impurities in semiconductors." (12 2006).
  • Windl, W.; Liang, T.; Lopatin, S.; Duscher, G. "Characterization and modeling of atomically sharp "perfect" Si:Ge/SiO2 interfaces." (12 2006).
  • Windl, W.; Khorsandi, B.; Luo, W.; Blue, T.E. "111-116 SiC based neutron flux monitors for very high temperature nuclear reactors." (10 2006).

2003

  • Windl, W.; Liang, T.; Lopatin, S.; Duscher, G. "Atomistic modeling of the detailed structure of Si/SiO2 interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)." (9 2003).
  • Lopatin, S.; Duscher, G.; Windl, W. "Atomic resolution Z-contrast imaging and EELS: Application for Ge/SiO 2 interface." (9 2003).

2002

  • Windl, W.; Daw, M.S. "Predictive process simulation and ab-initio calculation of the physical volume of electrons in silicon." (12 2002).
  • Beardmore, K.M.; Windl, W.; Haley, B.P.; Grønbech-Jensen, N. "Diffusion mechanisms and capture radii in silicon." (12 2002).

2001

  • Windl, W.; Daw, M.S.; Carlson, N.N.; Laudon, M. "Multiscale modeling of stress-mediated diffusion in silicon - volume tensors." (12 2001).
  • Uberuaga, B.P.; Henkelman, G.; Jónsson, H.; Dunham, S.T. et al. "Theoretical investigations of diffusion and clustering in semiconductors." (12 2001).
  • Daw, M.S.; Windl, W.; Laudon, M. "General treatment of the effect of stress on defect diffusion in Si." (12 2001).
  • Windl, W.; Liu, X.Y.; Masquelier, M.P. "Ab initio modeling of boron clustering in silicon." (12 2001).

1997

  • Windl, W.; Kress, J.D.; Voter, A.F.; Menendez, J. et al. "Influence of the local microstructure on the macroscopic properties of Si1-x-yGexCy alloys." (12 1997).